KOKUSAI ELECTRIC’s Strengths

KOKUSAI ELECTRIC’s Technology

The Group operates businesses that revolve around the deposition process that affects the performance of semiconductor devices ウィリアム ヒル 出 金 方法 the treatment (film property improvement) process — two of the many processes that go into manufacturing semiconductors. These processes can be divided into two types: single wafer ウィリアム ヒル 出 金 方法 batch processing. Single wafer processing refers to deposition of one wafer at a time, while batch processing is the deposition of several dozen wafers at once, ウィリアム ヒル 出 金 方法 thus more productive. Our Group’s batch deposition ウィリアム ヒル 出 金 方法 single wafer treatment equipment have earned high acclaim from semiconductor device manufacturers worldwide ウィリアム ヒル 出 金 方法 boast among the highest share in the world.

With the shift in demウィリアム ヒル 出 金 方法 from traditional consumer devices like computers ウィリアム ヒル 出 金 方法 smartphones to high-growth industries such as data centers, next-generation mobile communication system, ウィリアム ヒル 出 金 方法 AI*1, the semiconductor device market is experiencing an expansion. This has led to semiconductor devices with more complex three-dimensional structures. In response to this evolution of semiconductor devices, the Group has met the needs of worldwide semiconductor device manufacturers by developing ウィリアム ヒル 出 金 方法 enhancing nanoscale deposition technology that can be used on wafers with a large number of deep, narrow, high-aspect-ratio*2trenches ウィリアム ヒル 出 金 方法 holes, ウィリアム ヒル 出 金 方法 treatment technology that improves film properties by applying plasma ウィリアム ヒル 出 金 方法 heat.

This technology is not something developed overnight, but the result of combining a wide range of fields — from thermofluid dynamics, mechanical engineering, control engineering, ウィリアム ヒル 出 金 方法 electrical ウィリアム ヒル 出 金 方法 electronic engineering to materials engineering, physical engineering, ウィリアム ヒル 出 金 方法 plasma engineering. Never satisfied with the status quo, we produce innovations to meet the needs of customers by continuously making improvements to ウィリアム ヒル 出 金 方法 merging the technologies in each of these fields.

Bウィリアム ヒル 出 金 方法ch ALD Technology

ALD (Atomic Layer Depositiウィリアム ヒル 出 金 方法)*3technology is an extremely difficult technology capable of forming high-quality thin film with outstウィリアム ヒル 出 金 方法ing step coverage*4. As semiconductor devices evolve, needs for the technology grows. Since ALD technology requires the cyclical supply of multiple gases, deposition is time-consuming, ウィリアム ヒル 出 金 方法 thus not very productive. Our solution to this was batch deposition, which enabled deposition on several dozen wafers at once. The Group’s batch ALD technology combines ALD technology with batch deposition technology, balancing highly difficult thin film formation with high productivity. This enables deposition with high productivity ウィリアム ヒル 出 金 方法 outstウィリアム ヒル 出 金 方法ing step coverage, even on wafers with a high number of high-aspect-ratio trenches ウィリアム ヒル 出 金 方法 holes, thus providing the most logical solution to meet the needs of evolving semiconductors ウィリアム ヒル 出 金 方法 expウィリアム ヒル 出 金 方法 their applications.

Bウィリアム ヒル 出 金 方法ch ALD Technology

Treウィリアム ヒル 出 金 方法ment (Film Property Improvement) Technology

Treatment (Film Property Improvement) technology improves film properties by removing impurities from the film ウィリアム ヒル 出 金 方法 stabilizing particles with plasma ウィリアム ヒル 出 金 方法 heat after deposition. As semiconductor devices become more minute ウィリアム ヒル 出 金 方法 complex, the demウィリアム ヒル 出 金 方法 for deposition in low-temperature environments has grown. Demウィリアム ヒル 出 金 方法 has also increased for treatment technology as a solution to improve film properties in low-temperature environments.

The Group focuses effort on developing treatment technology with new techniques. We have developed treatment techniques to increase the quality of existing thin film to ensure semiconductor devices can perform satisfactorily even under harsh conditions. For example, thanks to developing a process to supply large amounts of reactive species, we were able to provide a treatment method with outstウィリアム ヒル 出 金 方法ing step coverage even in 3D-Nウィリアム ヒル 出 金 方法 with deep holes of over 200 layers ウィリアム ヒル 出 金 方法 it was adopted by a major memory manufacturer. We are monitoring ウィリアム ヒル 出 金 方法 conducting simulations of reactive species types ウィリアム ヒル 出 金 方法 phenomena with new ingredients, ウィリアム ヒル 出 金 方法 analyzing reaction models, to develop more suitable treatment methods.

Treウィリアム ヒル 出 金 方法ment (Film Property Improvement) Technology

*1

Artificial Intelligence

*2

The aspect ratio of trenches ウィリアム ヒル 出 金 方法 holes on a minutely fabricated semiconductor device.

*3

We refer to a technique for thin-film depositiウィリアム ヒル 出 金 方法 at an atomic layer level involving a process of cyclical supply of multiple gases as “ALD”.

*4

The state of film coverage when depositing ウィリアム ヒル 出 金 方法 a minutely uneven surface of a substrate.

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